Development of SWIR filter materials compatible with CMOS technology

Description

This project is the result of a collaboration between Qurv and ICFO to advance the development of next-generation SWIR (short-wave infrared) imaging sensors based on quantum dot and graphene technologies. The central objective is the microfabrication of SWIR filter stacks composed of multiple thin-film materials. The research focuses on selecting and qualifying new materials, optimizing deposition methods, and delivering robust process recipes for Qurv's manufacturing roadmap. Initial work prioritizes thin metal oxide layers deposited in a clean room, ensuring contamination control and industrial scalability of the devices.

Background

Eduard holds a PhD in thin metal oxide wires for optoelectronic applications from DTU Nanolab . His academic background includes a Bachelor's degree in Materials Engineering from UPC and EEIGM, as well as a Master's degree in Materials Science from EEIGM and LTU . This training provides him with a highly specialized foundation in the interaction of materials at the nanoscale and their integration into photonic and electronic systems.

Motivation

The project is driven by the need to optimize the performance and manufacturability of SWIR sensors through precise control of deposition. Eduard systematically evaluates metal oxides, including transparent conducting oxides (TCOs) , and nitride layers using ALD, sputtering and evaporation techniques . His motivation is to define CMOS-compatible process windows that control the stoichiometry and stress of the layers to improve optical transmission and sheet resistance. By delivering this technical knowledge, he seeks to reduce manufacturing variability and strengthen the innovation capabilities of both Qurv and the ICFO cleanroom.