Maria Escolà Gallinat
Degree in Engineering Physics and Master's Degree in Engineering Physics
Electronic and Structural Characterization of Vanadium-Doped ZnO Thin Layers by UPS Spectroscopy
Electronic and Structural Characterization of Vanadium-Doped ZnO Thin Layers by UPS Spectroscopy
Description
This project aims at the electronic characterization of thin layers of zinc oxide (ZnO) doped with vanadium. Using Ultraviolet Photoelectron Spectroscopy (UPS), fundamental electronic parameters of the samples, such as the Fermi level and the position of the valence band, are determined. Additionally, EELS spectroscopy and HRTEM (High Resolution Transmission Electron Microscopy) images are used to identify the crystallographic structure of the films. These experimental data are crucial to calculate the complex dielectric function of the samples, allowing their validation and comparison with theoretical calculations in future research lines.Background
Maria graduated in Engineering Physics from the Polytechnic University of Catalonia (UPC). She is currently pursuing a Master's degree in Engineering Physics at DTU (Denmark Technical University), where she specializes in Nanosystems Engineering. Her academic career is notable for a markedly practical approach, oriented towards the acquisition of experimental experience in both the fabrication of nanomaterials and advanced electron microscopy techniques.Motivation
As can be seen from her background in the sources, Maria is motivated by the exploration of new materials at the nanoscale and their application in advanced electronic devices. Her interest focuses on combining the theoretical rigor of engineering physics with the mastery of cutting-edge characterization techniques to optimize the performance of thin films. This research is fundamental for the development of new doped semiconductors that can improve the efficiency of today's microelectronic components.
Host Organization
Supervisors
Joaquim Puigdollers
UPC supervisor
Cristobal Voz
UPC supervisor
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